- I thought this is of interest for the group. Yesterday a very
interesting paper was published in Nature:
General observation of n-type field-effect behaviour in organic
LAY-LAY CHUA, JANA ZAUMSEIL, JUI-FEN CHANG, ERIC C.-W. OU,
PETER K.-H. HO, HENNING SIRRINGHAUS & RICHARD H. FRIEND
The authors demonstrate N-type transistor behavior in many organic
semiconductors that were thought to be P-type only so far (for example
P3HT). In fact many of their devices exhibit electron mobilities that
exceed the hole mobility.
They argue that the N-type action is usually suppressed due to
trapping of electrons at OH- sites at the semiconductor/insulator
interface. The argument is supported by comparing transistors with
different hydrophobic SAMs at the interface to remove the OH sites,
and FTIR measurements.